US Patent Issued to SAMSUNG ELECTRONICS on July 14 for "Semiconductor devices including conductive pattern on channel" (South Korean Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,762, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor devices including conductive pattern on channel" was invented by Eunsuk Hwang (Suwon-si, South Korea), Sanghoon Uhm (Suwon-si, South Korea) and Minhee Cho (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a bit line on a substrate, a gate electrode over the bit line and spaced apart from the bit line, a gate insulation pattern on a sidewall of the gate electrode, a channel on a sidewall of the gate insulation pattern and including an oxide semiconductor material, a conductive pattern c...