US Patent Issued to SAMSUNG ELECTRONICS on July 14 for "Memory device having hydrogen-ion bypass via on cell substrate and connected to pad structure" (South Korean Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,780, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-Si, South Korea).

"Memory device having hydrogen-ion bypass via on cell substrate and connected to pad structure" was invented by Woo Yong Jeon (Anyang-si, South Korea), Eun-Ji Kim (Seoul, South Korea), Ji Young Kim (Seoul, South Korea) and Moo Rym Choi (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a peripheral circuit structure including a peripheral circuit and a first bonding pad, the first bonding pad connected to the peripheral circuit, a cell structure on the peripheral circuit structure, the cell structur...