ALEXANDRIA, Va., July 14 -- United States Patent no. 12,681,378, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Mask process correction methods and methods of fabricating lithographic masks using the same" was invented by Soeun Shin (Hwaseong-si, South Korea), Minah Kim (Hwaseong-si, South Korea) and Jin Choi (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of fabricating lithographic masks include performing mask process correction (MPC) on a mask tape out (MTO) design layout. Performing MPC may include identifying a plurality of unit cells (each being iterated in the MTO design layout and including a plurality of curve patterns), and perf...