US Patent Issued to SAMSUNG ELECTRONICS on Feb. 24 for "Semiconductor device with improved reliability of a connection relation between a through via and a lower wiring layer" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,564,032, issued on Feb. 24, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device with improved reliability of a connection relation between a through via and a lower wiring layer" was invented by Sang Cheol Na (Suwon-si, South Korea), Kyoung Woo Lee (Suwon-si, South Korea), Min Chan Gwak (Suwon-si, South Korea), Guk Hee Kim (Suwon-si, South Korea), Young Woo Kim (Suwon-si, South Korea) and Anthony Dongick Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes: a first substrate; an active pattern extending on the first substrat...