US Patent Issued to SAMSUNG ELECTRONICS on Feb. 24 for "Semiconductor device with a fin-shaped active region and an gate electrode" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,769, issued on Feb. 24, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor device with a fin-shaped active region and an gate electrode" was invented by Jae-Hoon Lee (Suwon-si, South Korea), Gi-gwan Park (Hwaseong-si, South Korea) and Tae-young Kim (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate including a fin-shaped active region that protrudes from the substrate, a gate insulating film covering a top surface and both side walls of the fin-shaped active region, a gate electrode on the top surface and the both side walls of the fin-shaped activ...