ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,564,044, issued on Feb. 24, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-Do, South Korea).

"Non-volatile memory device, method for fabricating the same and electronic system including the same" was invented by Sangsoo Lee (Suwon-si, South Korea), Hyung Joon Kim (Suwon-si, South Korea) and Eunhyun Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Non-volatile memory devices, methods for fabricating the same, and/or electronic systems including the same may be provided. A non-volatile memory device may include a substrate, a gate electrode layer, an electrode pad, a channel structure, a vertical through contact, and a sep...