ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,374, issued on Feb. 17, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor device with active pattern including a transition pattern and method for fabricating the same" was invented by Seong-Ho Song (Yongin-si, South Korea), Jong Han Lee (Yangsan-si, South Korea), Jong Ha Park (Suwon-si, South Korea), Jae Hyun Lee (Hwaseong-si, South Korea), Jong Hoon Baek (Ansan-si, South Korea) and Da Bok Jeong (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a substrate including first and second regions along a first direction, and a third region between the first region ...