ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,370, issued on Feb. 17, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor device manufacturing method" was invented by Eun Hyea Ko (Suwon-si, South Korea), Hoon Han (Anyang-si, South Korea), Byung Keun Hwang (Seongnam-si, South Korea), Jeong Ho Mun (Yongin-si, South Korea), Hyun-Ji Song (Anyang-si, South Korea) and Youn Joung Cho (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method for manufacturing a semiconductor device using selective vapor deposition and selective desorption. The method for manufacturing a semiconductor device includes providing a fir...