US Patent Issued to SAMSUNG ELECTRONICS on Feb. 17 for "Semiconductor device including source/drain pattern with varied germanium concentrations" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,362, issued on Feb. 17, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including source/drain pattern with varied germanium concentrations" was invented by Namkyu Cho (Suwon-si, South Korea), Jungtaek Kim (Suwon-si, South Korea), Moon Seung Yang (Suwon-si, South Korea), Sumin Yu (Suwon-si, South Korea), Seojin Jeong (Suwon-si, South Korea), Seokhoon Kim (Suwon-si, South Korea) and Pankwi Park (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate including an active pattern, a channel pattern on the active pattern, and a source/drain pattern on a ...