ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,357, issued on Feb. 17, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device and method of manufacturing the same" was invented by Kihwan Kim (Suwon-si, South Korea), Kyungho Kim (Suwon-si, South Korea), Kanghun Moon (Suwon-si, South Korea), Choeun Lee (Suwon-si, South Korea) and Yonguk Jeon (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device, including a fin active region; a device isolation layer covering two sidewalls of the fin active region on the substrate; a gate structure; a nano-sheet structure including a plurality of nano-sheets; and source/drain regions dispo...