ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,642, issued on Feb. 17, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device and method for fabricating the same" was invented by Seon Bae Kim (Suwon-si, South Korea) and Seo Woo Nam (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a first interlayer insulating layer disposed on the substrate, a first trench formed inside the first interlayer insulating layer, a contact plug disposed inside the first trench, a first wiring pattern disposed on the contact plug, a second wiring pattern which is disposed on the first interlayer insulating layer and ...