ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,421, issued on Feb. 17, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"CMOS image sensors" was invented by Jung Bin Yun (Hwaseong-si, South Korea), Kyungho Lee (Suwon-si, South Korea) and Sung-Ho Choi (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor comprises a first separation zone in a substrate, the first separation zone defining first and second pixel regions arranged in a first direction, the first separation zone including first parts substantially parallel extending in the first direction, and the substrate...