US Patent Issued to SAMSUNG ELECTRONICS on Aug. 4 for "Semiconductor memory devices having stacked structures therein that support high integration" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,708, issued on Aug. 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor memory devices having stacked structures therein that support high integration" was invented by Sangjae Lee (Busan, South Korea), Jaehyung Kim (Seoul, South Korea) and Dongseog Eun (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an upper stack structure extending on a lower stack structure, which extends on an underlying substrate. A channel structure extends through the upper stack structure and the lower stack structure. The lower stack structure includes a first lower electrode layer d...