ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,759, issued on Aug. 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor devices including a lower power interconnection line and methods of manufacturing the same" was invented by Gukhee Kim (Suwon-si, South Korea), Kyoungwoo Lee (Suwon-si, South Korea), Jeewoong Kim (Suwon-si, South Korea), Sangcheol Na (Suwon-si, South Korea), Minchan Gwak (Suwon-si, South Korea), Youngwoo Kim (Suwon-si, South Korea) and Anthony Dongick Lee (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate having a first and second active patterns therein, first and second source/dra...