US Patent Issued to SAMSUNG ELECTRONICS on Aug. 4 for "Semiconductor device including a field effect transistor" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,758, issued on Aug. 4, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including a field effect transistor" was invented by Seungmin Cha (Suwon-si, South Korea), Jinkyu Kim (Suwon-si, South Korea) and Yunsuk Nam (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a first substrate that includes a first region and a second region; an active pattern disposed on the first region; a source/drain pattern disposed on the active pattern; a through contact disposed on the second region; a first metal layer disposed on the through contact; a second substrate dispose...