ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,689, issued on Aug. 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Integrated circuit device and method of manufacturing the same" was invented by Kyooho Jung (Seoul, South Korea) and Wonsik Choi (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing an integrated circuit device includes forming a plurality of lower electrodes above a substrate, forming a dielectric film on the plurality of lower electrodes, forming a doped upper interface film on the dielectric film, and forming an upper electrode on the doped upper interface film, wherein the doped upper interface film includes ...