ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,858, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Three-dimensional semiconductor device including a lower connection structure including a conductive pattern and a through conductive pattern" was invented by Dongkyu Lee (Suwon-si, South Korea), Hyungjoo Na (Suwon-si, South Korea), Jinchan Yun (Suwon-si, South Korea), Cheoljin Yun (Suwon-si, South Korea) and Kyuman Hwang (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional semiconductor device includes a lower connection structure; a device structure; and an upper connection structure sequentially disposed along a firs...