ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,745, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor memory device, method of fabricating the same, and electronic system including the same" was invented by Moo Rym Choi (Suwon-si, South Korea), Jung Tae Sung (Suwon-si, South Korea) and Yun Sun Jang (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a memory device, a method of fabricating the same, and an electronic system including the same. The memory device includes a peripheral circuit structure and a cell structure on the peripheral circuit structure. The cell structure comprises a cell substrate including...