ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,151, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device having insulating layers with multiple material properties and method of fabricating same" was invented by Minjae Kang (Suwon-si, South Korea), Yeonggil Kim (Suwon-si, South Korea), Wookyung You (Suwon-si, South Korea), Woojin Lee (Suwon-si, South Korea) and Jayeong Heo (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a semiconductor device including a substrate, conductive structures on the substrate and extending in parallel to each other in a first direction, and a first interlayer dielectric layer ...