US Patent Issued to SAMSUNG ELECTRONICS on Aug. 25 for "Semiconductor data storage device including first and second stack structures with dummy structure therebetween and data storage system including the same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,741, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor data storage device including first and second stack structures with dummy structure therebetween and data storage system including the same" was invented by Donghoon Kwon (Suwon-si, South Korea), Chungki Min (Suwon-si, South Korea), Boun Yoon (Suwon-si, South Korea) and Kihoon Jang (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a source structure, first and second stack structures, including first gate electrodes stacked on the source structure to be spaced apart from each other; a dummy...