ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,127, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Method of forming composite mask patterns of a semiconductor device" was invented by Jisoo Park (Suwon-si, South Korea), Junghan Lee (Suwon-si, South Korea) and Kwanyoung Chun (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a pattern of a semiconductor device, the method comprising forming an insulating film on a substrate having a first region and a second region, sequentially forming a lower mask layer and an upper mask layer on the insulating film, forming a line-shaped hard mask pattern having a plurality of na...