ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,894, issued on Aug. 18, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Three-dimensional semiconductor memory device and electronic system including the same" was invented by Donghoon Kwon (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional semiconductor memory device comprises a first substrate including a cell array region and a contact region, a stack structure including interlayer dielectric layers and gate electrodes on the first substrate, a second dielectric layer on the stack structure, a cell contact plug that extends through the second dielectric layer and the contact region, a ...