US Patent Issued to SAMSUNG ELECTRONICS on Aug. 18 for "Semiconductor devices comprising first to third overlay structures penetrating through first to third mold structures on overlay mark region and data storage systems including the same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,935, issued on Aug. 18, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor devices comprising first to third overlay structures penetrating through first to third mold structures on overlay mark region and data storage systems including the same" was invented by Junseok Park (Suwon-si, South Korea), Seunghak Park (Suwon-si, South Korea) and Chan Hwang (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first stack structure in a first region, a first channel structure in contact with the substrate, a second stack structure on the first stack structure, a second ...