ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,710,692, issued on Aug. 18, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Optical proximity correction method and photomask fabrication method using the same" was invented by Heungsuk Oh (Suwon-si, South Korea), Joobyoung Kim (San Jose, Calif.), Sangwook Kim (Suwon-si, South Korea), Hee-Jun Lee (Suwon-si, South Korea), Jeeeun Jung (Suwon-si, South Korea) and Kyu-Bin Han (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A photomask fabrication method comprising performing an optical proximity correction (OPC) on a design pattern to generate a correction pattern, and manufacturing the photomask having the corre...