US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor device including vertical channel pattern and method for fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,702, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Semiconductor device including vertical channel pattern and method for fabricating the same" was invented by Sanghoon Uhm (Suwon-si, South Korea), Min Hee Cho (Suwon-si, South Korea), Wonsok Lee (Suwon-si, South Korea) and Wooje Jung (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a bit line on the substrate, a channel pattern on the bit line and extending in a direction perpendicular to the bit line, a word line intersecting the bit line and spaced apart from the channel pattern, a gate insulatin...