US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor device including BSPDN structures in small-CPP area and large-CPP area" (New York, Virginia Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,952, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including BSPDN structures in small-CPP area and large-CPP area" was invented by Panjae Park (Halfmoon, N.Y.) and Kang-ill Seo (Springfield, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device in which a large-CPP area includes a 1st source/drain structure; a 1st frontside contact structure, at a front side of the semiconductor device, connected to the 1st source/drain structure; a 1st via structure, at a lateral side of the 1st source/drain structure, connected to the 1st frontside contact structure; ...