US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Nonvolatile memory device with reduced lateral charge" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,146, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Nonvolatile memory device with reduced lateral charge" was invented by Seyun Kim (Suwon-si, South Korea), Kyunghun Kim (Suwon-si, South Korea), Sunho Kim (Suwon-si, South Korea), Hyungyung Kim (Suwon-si, South Korea), Seungyeul Yang (Suwon-si, South Korea), Gukhyon Yon (Suwon-si, South Korea), Minhyun Lee (Suwon-si, South Korea), Joonsuk Lee (Suwon-si, South Korea), Seokhoon Choi (Suwon-si, South Korea) and Hoseok Heo (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a nonvolatile memory device. The nonvolatile memory dev...