US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Method for semiconductor patterning using ion implanted organic masks" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,943, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Method for semiconductor patterning using ion implanted organic masks" was invented by Inoue Naoki (Suwon-si, South Korea) and Tsunehiro Nishi (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes sequentially disposing a hard mask layer, an organic layer, and a metal-containing photoresist layer on a substrate, patterning the metal-containing photoresist layer to form a first mask pattern exposing a first region of the organic layer, implanting ions into the first region of the orga...