ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,646, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Memory device and electronic device including the same" was invented by Jinseong Heo (Suwon-si, South Korea), Taehwan Moon (Suwon-si, South Korea), Seunggeol Nam (Suwon-si, South Korea), Hyunjae Lee (Suwon-si, South Korea) and Dukhyun Choe (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a plurality of gate electrodes spaced apart from each other in a first direction, a memory layer comprising a plurality of memory regions that protrude and extend in a second direction perpendicular to the first direction to...