US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Hybrid memory device and electronic device including same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,651, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Hybrid memory device and electronic device including same" was invented by Jinseong Heo (Seoul, South Korea), Hagyoul Bae (Suwon-si, South Korea) and Seunggeol Nam (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A hybrid memory device includes a first transistor including a first channel region, a first gate electrode facing and spaced apart from the first channel region, and a first memory layer arranged between the first channel region and the first gate electrode, and a second transistor including a second channel region includi...