US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "3D-stacked semiconductor device including source/drain regions vertically isolated from each other by strengthened isolation structure" (New York, Virginia Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,677, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"3D-stacked semiconductor device including source/drain regions vertically isolated from each other by strengthened isolation structure" was invented by Keumseok Park (Slingerlands, N.Y.) and Kang-ill Seo (Springfield, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device which includes: a 1st source/drain region connected to a 1st channel structure; a 2nd source/drain region, above the 1st source/drain region, connected to a 2nd channel structure above the 1st channel structure; a channel isolation layer between the 1st chan...