ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,738, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor memory device including lower contact plug protruding from sidewall spacers" was invented by Jongmin Kim (Suwon-si, South Korea), Chansic Yoon (Suwon-si, South Korea) and Jihoon Sung (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an active pattern on a substrate. A bit line structure is on the active pattern. A spacer structure is on a sidewall of the bit line structure. A lower contact plug directly contacts the spacer structure. The spacer structure includes a first spacer covering an u...