US Patent Issued to SAMSUNG ELECTRONICS on April 7 for "Semiconductor device having a source/drain contact connected to a back-side power rail by a landing pad and a through electrode" (South Korean Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,978, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device having a source/drain contact connected to a back-side power rail by a landing pad and a through electrode" was invented by Ji Hyung Kim (Suwon-si, South Korea), Jae Hee Oh (Suwon-si, South Korea), Je Gwan Hwang (Suwon-si, South Korea) and Jeong Hoon Ahn (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate including a first surface and a second surface opposite to the first surface; an active pattern extending in a first direction on the first surface of the substrate; a firs...