US Patent Issued to SAMSUNG ELECTRONICS on April 7 for "Nonvolatile memory device, storage device including the same, and method of testing nonvolatile memory device" (South Korean Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,469, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Nonvolatile memory device, storage device including the same, and method of testing nonvolatile memory device" was invented by Gangmin Lee (Suwon-si, South Korea), Jaehue Shin (Suwon-si, South Korea), Daeseok Byeon (Suwon-si, South Korea) and Yongsung Cho (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nonvolatile memory device may include a page buffer, a control signal generator, and a current mirror. The page buffer may be connected to a bitline and may allow a replicated current to flow through a ground terminal in response to a...