US Patent Issued to SAMSUNG ELECTRONICS on April 7 for "Non-volatile memory device including first and second monitoring channel structures and non-volatile memory system comprising the same" (South Korean Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,599,000, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Non-volatile memory device including first and second monitoring channel structures and non-volatile memory system comprising the same" was invented by Jung-Hwan Lee (Seoul, South Korea) and Jin-Soo Lim (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory device and a non-volatile memory system comprising the same are provided. The non-volatile memory device includes a first stack in which a first conductive pattern and a first dielectric layer are alternately stacked in a first direction on a substrate, a second sta...