ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,963, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Methods of manufacturing semiconductor devices using enhanced patterning techniques" was invented by Junhyeok Ahn (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device fabrication method includes forming a substrate having first and second regions therein, with different densities of active regions in the first and second regions. A cell trench is formed, which defines cell active regions in the first region, and a peripheral trench is formed, which defines peripheral active regions in the second region. A first insul...