ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,804, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Integrated circuit device" was invented by Yeondo Jung (Suwon-si, South Korea), Chul Kim (Suwon-si, South Korea), Kichul Kim (Suwon-si, South Korea), Gwirim Park (Suwon-si, South Korea), Haejun Yu (Swuon-si, South Korea), Chaeyeong Lee (Suwon-si, South Korea) and Kyungin Choi (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes a pair of fin-type active regions, which extend in a first horizontal direction on a substrate, and a fin isolation insulator between ones of the pair of fin-type active regions...