US Patent Issued to SAMSUNG ELECTRONICS on April 21 for "Three-dimensional semiconductor memory device, method of fabricating the same, and electronic system including the same" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,547, issued on April 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Three-dimensional semiconductor memory device, method of fabricating the same, and electronic system including the same" was invented by Younghwan Son (Hwaseong-si, South Korea) and Dongkeun Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method including forming a mold structure including insulating layers and sacrificial layers alternately stacked on a semiconductor substrate, the insulating layers exposing stepwise-stacked ends of the sacrificial layers on a connection region of the semiconductor substrate, form...