US Patent Issued to SAMSUNG ELECTRONICS on April 21 for "Method for fabricating a semiconductor device having back gate electrodes, active layers, and data lines" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,561, issued on April 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Method for fabricating a semiconductor device having back gate electrodes, active layers, and data lines" was invented by Hyungeun Choi (Suwon-si, South Korea) and Kiseok Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device may use, as an internal contact region, a region in which a memory cell region overlaps a core and/or peripheral region by bonding at least a partial region of the memory cell region to at least a partial region of the core and/or peripheral region by a direct bonding...