US Patent Issued to SAMSUNG ELECTRONICS on April 21 for "Magnetic tunneling junction device, memory device including the same, and method of manufacturing the magnetic tunneling junction device" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,747, issued on April 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Magnetic tunneling junction device, memory device including the same, and method of manufacturing the magnetic tunneling junction device" was invented by Kwangseok Kim (Seoul, South Korea), Seonggeon Park (Seongnam-si, South Korea), Naoki Hase (Hwaseong-si, South Korea) and Seungjae Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are magnetic tunneling junction devices, memory devices including the magnetic tunneling junction devices, and methods of manufacturing the magnetic tunneling junction devices. The magnetic ...