US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Semiconductor device with conductive layers in isolation structures" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,477, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Semiconductor device with conductive layers in isolation structures" was invented by Younggul Song (Hwaseong-si, South Korea), Junyeong Seok (Seoul, South Korea) and Eunchu Oh (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a plurality of gate electrode layers stacked in a first direction perpendicular to an upper surface of a substrate, a plurality of channel structures penetrating through the plurality of gate electrode layers and extending in the first direction, a plurality of first isolatio...