US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Light emitting diodes with lattice matching sidewall passivation layer and method of making thereof" (California Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,571, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Light emitting diodes with lattice matching sidewall passivation layer and method of making thereof" was invented by Saket Chadda (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light emitting diode includes a mesa structure containing a first-conductivity-type compound semiconductor layer, an active layer stack configured to emit light at a peak wavelength, and a second-conductivity-type compound semiconductor layer, and a passivation material layer contacting at least a sidewall of the mesa structure. The passivation material layer h...