US Patent Issued to SAMSUNG ELECTRONICS, UIF (University Industry Foundation), Yonsei University on Nov. 3 for "Metal chalcogenide film, memory element including same, and method for manufacturing phase-change heterolayer" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,301, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea) and UIF (University Industry Foundation), Yonsei University (Seoul, South Korea).

"Metal chalcogenide film, memory element including same, and method for manufacturing phase-change heterolayer" was invented by Wooyoung Yang (Suwon-si, South Korea), Hyungjun Kim (Seoul, South Korea), Hajun Sung (Suwon-si, South Korea), Kiyeon Yang (Suwon-si, South Korea), Changseung Lee (Suwon-si, South Korea), Changyup Park (Suwon-si, South Korea), Seung-min Chung (Seoul, South Korea), Sangyoon Lee (Seoul, South Korea) and Inkyu Sohn (Seoul, South Korea).

According to the abstract* released by the U.S. P...