ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,180, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. LTD. and Pusan National University Industry-University Cooperation.

"Semiconductor device" was invented by Kyooho Jung (Suwon-si, South Korea), Min Hyuk Park (Busan, South Korea), Hanjin Lim (Suwon-si, South Korea), Geun Hyeong Park (Seoul, South Korea) and Ju Yong Park (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a semiconductor device comprising a substrate, a capacitor contact structure electrically connected to the substrate, a bottom electrode connected to the capacitor contact structure, a capacitor dielectric layer on the bottom electrode, and a...