US Patent Issued to SAMSUNG ELECTRONICS, Korea University Research and Business Foundation on Feb. 24 for "Magnetoresistive random access memory devices having efficient unit cell layouts" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,741, issued on Feb. 24, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea) and Korea University Research and Business Foundation (Seoul, South Korea).

"Magnetoresistive random access memory devices having efficient unit cell layouts" was invented by Jongsun Park (Seoul, South Korea), Yunho Jang (Seoul, South Korea) and Seonggeon Park (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes first and second word lines, a bit line, a source line, and a memory cell. The memory cell includes a spin-orbit torque (SOT) pattern having a first end electrically coupled to the source lin...