ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,731, issued on Sept. 8, was assigned to SAMSUNG ELECTRO-MECHANICS Co. LTD. (Suwon-si, South Korea).
"Multilayer capacitor with a dielectric including an aluminum nitride based compound" was invented by Tae Kyung Lee (Suwon-si, South Korea), Jehong Kyoung (Suwon-si, South Korea), Sung-Min Cho (Suwon-si, South Korea), Taejoon Park (Suwon-si, South Korea), Sehun Park (Suwon-si, South Korea), Moonchul Lee (Suwon-si, South Korea) and Joung Hun Kim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A multilayered capacitor according to present disclosure includes a dielectric layer including an aluminum nitride (AlN)-based compound, the...