US Patent Issued to RTX on March 24 for "Atomic layer deposition method enhancing the nucleation and crystallinity of a boron nitride interface coating on a silicon carbide fiber" (Connecticut Inventor)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,583,798, issued on March 24, was assigned to RTX Corp. (Farmington, Conn.).

"Atomic layer deposition method enhancing the nucleation and crystallinity of a boron nitride interface coating on a silicon carbide fiber" was invented by John E. Holowczak (South Windsor, Conn.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a ceramic matrix composite includes arranging a plurality of fibers into a preform, each of the plurality of fibers being formed from silicon carbide, depositing a nucleating layer on the plurality of fibers, the nucleating layer comprising a crystalline material having an a-lattice constant and a c-lattice constant, an...