ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,204, issued on Sept. 8, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Semiconductor device and method of manufacturing the same" was invented by Kazuhiro Tamura (Kyoto, Japan), Naoki Izumi (Kyoto, Japan) and Yusuke Shimizu (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an n-type semiconductor layer, a p-type drift region formed in a surface layer portion of the semiconductor layer, an n-type body region formed in the surface layer portion of the semiconductor layer, a p-type drain region formed in a surface layer portion of the drift region, a p-type source region formed in a surface layer portion of th...