US Patent Issued to ROHM on Sept. 8 for "Nitride semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,195, issued on Sept. 8, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Nitride semiconductor device" was invented by Isamu Nishimura (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor device includes an electron transit layer, formed above a substrate, and an electron supply layer formed on the electron transit layer and having a larger band gap than the electron transit layer. A gate layer is formed on the electron supply layer and contains an acceptor impurity. A gate electrode is formed on the gate layer. A source electrode and a drain electrode are located at opposite sides of the gate layer and contact the elec...