US Patent Issued to ROHM on Sept. 29 for "Nitride semiconductor device with embedded metal in trench of substrate" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,751,287, issued on Sept. 29, was assigned to ROHM Co. LTD. (Kyoto, Japan).

"Nitride semiconductor device with embedded metal in trench of substrate" was invented by Keita Shikata (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride semiconductor device is a nitride semiconductor device including a substrate that has a first main surface and a second main surface at an opposite side thereto and a nitride epitaxial layer that is formed on the first main surface. The nitride semiconductor device has, in plan view, an active region inside the nitride epitaxial layer in which a two-dimensional electron gas can form and an inactive region i...